inchange semiconductor isc product specification isc silicon npn power transistor BUL312FP description collector?emitter sustaining voltage : v ceo(sus) = 500v(min.) low collector saturation voltage : v ce( sat ) = 0.5v(max) @ i c = 1a very high switching speed applications designed for use in lighting applications and low cost switch-mode power supplies. absolute maximum ratings(t a =25 ) symbol parameter value unit v ces collector-emitter voltage 1150 v v ceo collector-emitter voltage 500 v v ebo emitter-base voltage 9 v i c collector current-continuous 5 a i cm collector current-peak t p <5ms 10 a i b b base current-continuous 3 a i bm base current-peak t p <5ms 4 a p c collector power dissipation t c =25 36 w t i junction temperature 150 t stg storage temperature range -65~150 thermal characteristics symbol parameter max unit r th j-c thermal resistance,junction to case 3.5 /w r th j-a thermal resistance,junction to ambient 62.5 /w isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn power transistor BUL312FP electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c = 100ma; l= 25mh 500 v v (br)ebo emitter-base breakdown voltage i e = 10ma; i c = 0 9 v v ce (sat)-1 collector-emitter saturation voltage i c = 1a; i b = 0.2a b 0.5 v v ce (sat)-2 collector-emitter saturation voltage i c = 2a; i b = 0.4a b 0.7 v v ce (sat)-3 collector-emitter saturation voltage i c = 3a; i b = 0.6a b 1.1 v v be (sat)-1 base-emitter saturation voltage i c = 1a; i b = 0.2a b 1.0 v v be (sat)-2 base-emitter saturation voltage i c = 2a; i b = 0.4a b 1.1 v v be (sat)-3 base-emitter saturation voltage i c = 3a; i b = 0.6a b 1.2 v i ces collector cutoff current v ce =1150v ; v be = 0 v ce =1150v ; v be = 0, t c = 125 1.0 2.0 ma i ceo collector cutoff current v ce = 500v; i b = 0 0.25 ma h fe-1 dc current gain i c = 10ma; v ce = 5v 8 h fe-2 dc current gain i c = 3a; v ce = 2.5v 10 switching times, inductive load t s storage time 1.9 s t f fall time i c = 2a; v cl = 250v; l= 200 h; i b1 = 0.4a; v be(off) = -5v; r bb = 0 0.16 s isc website www.iscsemi.cn
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